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| BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Rev. 05 -- 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 8 GHz wideband transistors FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment. DESCRIPTION NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X). Version with reverse pinning (BFG67/XR) also available on request. MARKING TYPE NUMBER BFG67 (Fig.1) BFG67/X (Fig.1) BFG67/XR (Fig.2) CODE V3% %MV V26 Fig.1 Simplified outline SOT143B. handbook, 2 columns 4 BFG67; BFG67/X; BFG67/XR PINNING DESCRIPTION PIN BFG67 1 2 3 4 collector base emitter emitter BFG67/X collector emitter base emitter BFG67/XR collector emitter base emitter 3 handbook, 2 columns 3 4 1 Top view 2 MSB014 2 Top view 1 MSB035 Fig.2 Simplified outline SOT143R. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot Cre fT GUM F PARAMETER collector-emitter voltage collector current (DC) total power dissipation feedback capacitance transition frequency maximum unilateral power gain noise figure Ts 65 C IC = ic = 0; VCB = 8 V; f = 1 MHz IC = 15 mA; VCE = 8 V; f = 500 MHz IC = 15 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz s = opt; IC = 5 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz s = opt; IC = 5 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz open base CONDITIONS - - - 0.5 8 17 1.3 2.2 TYP. MAX. 10 50 300 - - - - - V mA mW pF GHz dB dB dB UNIT Rev. 05 - 23 November 2007 2 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature range junction temperature BFG67; BFG67/X; BFG67/XR CONDITIONS open emitter open base open collector Ts 65 C; see Fig.3; note 1 - - - - - MIN. MAX. 20 10 2.5 50 380 150 175 V V V UNIT mA mW C C -65 - CONDITIONS note 1 VALUE 290 UNIT K/W MBC984 - 1 400 handbook, halfpage Ptot (mW) 300 200 100 0 0 50 100 150 T ( o C) s 200 Fig.3 Power derating curve. Rev. 05 - 23 November 2007 3 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE fT Cc Ce Cre GUM PARAMETER collector leakage current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance maximum unilateral power gain; note 1 CONDITIONS VCB = 5 V; IE = 0 IC = 15 mA; VCE = 5 V BFG67; BFG67/X; BFG67/XR MIN. - 60 - - - - - - - - - - - TYP. 100 8 0.7 1.3 0.5 17 10 1.3 1.7 2.5 3 MAX. 50 - - - - - - - - - - - UNIT nA GHz pF pF pF dB dB dB dB dB dB IC = 15 mA; VCE = 8 V; f = 500 MHz IE = ie = 0; VCB = 8 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = ic = 0; VCB = 8 V; f = 1 MHz IC = 15 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz IC = 15 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz F noise figure s = opt; IC = 5 mA; VCE = 8 V Tamb = 25 C; f = 1 GHz s = opt; IC = 15 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz IC = 5 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz; ZS = 60 IC = 15 mA; VCE = 8 V; Tamb = 25 C; f = 2 GHz; ZS = 60 Note S 21 2 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------- dB. ( 1 - S 11 2 ) ( 1 - S 22 2 ) Rev. 05 - 23 November 2007 4 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR MBB301 MBB302 120 handbook, halfpage h FE 0.8 handbook, halfpage Cre (pF) 0.6 80 0.4 40 0.2 0 0 20 40 I C (mA) 60 0 0 4 8 12 VCB (V) 16 VCE = 5 V. IC = ic = 0; f = 1 MHz. Fig.4 DC current gain as a function of collector current. Fig.5 Feedback capacitance as a function of collector-base voltage. handbook, halfpage 10 MBB303 MBB304 handbook,25 halfpage fT (GHz) 8 gain (dB) 20 MSG G max 6 G UM 15 4 10 2 5 0 0 10 20 30 I C (mA) 40 0 0 10 20 30 IC (mA) 40 VCE = 8 V; Tamb = 25 ; f = 2 GHz. VCE = 8 V; f = 1 GHz. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.6 Transition frequency as a function of collector current. Fig.7 Gain as a function of collector current. Rev. 05 - 23 November 2007 5 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR handbook, halfpage 50 MBB305 handbook, halfpage gain (dB) 40 G UM 50 gain (dB) MBB306 40 G UM 30 30 MSG 20 G max 10 10 20 MSG G max 0 10 10 2 10 3 f (MHz) 10 4 0 10 10 2 10 3 f (MHz) 10 4 VCE = 8 V; IC = 5 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. VCE = 8 V; IC = 15 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Fig.8 Gain as a function of frequency. Fig.9 Gain as a function of frequency. MBB307 handbook,50 halfpage gain (dB) handbook, halfpage 4 MBB308 F (dB) G UM 3 f = 2 GHz 40 1 GHz 30 900 MHz MSG 2 20 G max 1 10 500 MHz 0 10 10 2 10 3 f (MHz) 10 4 0 1 10 I C (mA) 100 VCE = 8 V; IC = 30 mA. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. VCE = 8 V. Fig.10 Gain as a function of frequency. Fig.11 Minimum noise figure as a function of collector current. Rev. 05 - 23 November 2007 6 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR handbook, halfpage 4 MBB309 F (dB) 3 I C = 30 mA 15 mA 5 mA 2 1 0 10 2 10 3 f (MHz) 10 4 VCE = 8 V. Fig.12 Minimum noise figure as a function of frequency. BFG67/X f (MHz) 500 8 VCE (V) 5 IC (mA) st un re gi 1 stability circle 2 ab le Noise Parameters Fmin (dB) 0.95 Gamma (opt) (mag) 0.455 (ang) 33.8 Rn/50 0.288 +j 0 -j 2 dB 0.2 3 dB 5 0.2 0.5 1 0.2 Fmin=0.95 dB OPT 2 5 10 5 10 on 0.5 10 1.5 dB 0.5 1 ZO = 50 . 2 MBB317 Fig.13 Noise circle figure. Rev. 05 - 23 November 2007 7 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67/X f (MHz) 1000 8 VCE (V) 5 un s reg table ion BFG67; BFG67/X; BFG67/XR IC (mA) 0.5 stability circle 1 2 Noise Parameters Fmin (dB) 1.3 Gamma (opt) (mag) 0.375 (ang) 65.9 Rn/50 0.304 0.2 Fmin =1.3 dB OPT 5 10 +j 0 -j 0.2 0.5 1 2 5 10 10 5 2 dB 0.2 3 dB 4 dB 0.5 1 ZO = 50 . 2 MBB316 Fig.14 Noise circle figure. BFG67/X f (MHz) 2000 8 VCE (V) 5 IC (mA) 1 0.5 2 Noise Parameters Fmin (dB) 2.2 Gamma (opt) (mag) 0.391 (ang) 136.5 Rn/50 +j 0.2 Fmin =2.2 dB 3 dB OPT 0 -j G max =12dB 0.2 8 dB 11 dB 10 dB 9 dB 5 0.2 0.5 1 2 5 4 dB 5 dB 5 10 10 0.184 10 Average Gain Parameters GMAX (dB) 12 Gamma (max) (mag) 0.839 (ang) -170 0.5 1 ZO = 50 . 2 MBB315 Fig.15 Noise circle figure. Rev. 05 - 23 November 2007 8 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR handbook, full pagewidth 1 0.5 2 3 GHz 0.2 5 10 0 -j 40 MHz 0.2 5 10 0.2 0.5 1 2 5 10 +j 0.5 1 VCE = 8 V; IC = 15 mA; ZO = 50 . 2 MBB314 Fig.16 Common emitter input reflection coefficient (S11). handbook, full pagewidth 90 120 60 150 30 40 MHz + 180 50 40 30 20 10 3 GHz 0 - 150 30 120 VCE = 8 V; IC = mA; ZO = 50 . 90 60 MBB313 Fig.17 Common emitter forward transmission coefficient (S21). Rev. 05 - 23 November 2007 9 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR handbook, full pagewidth 1 0.5 2 0.2 5 10 +j 0 -j 3 GHz 0.2 5 0.2 0.5 1 2 5 10 40 MHz 10 0.5 1 VCE = 8 V; IC = 15 mA. 2 MBB312 Fig.18 Common emitter reverse transmission coefficient (S12). handbook, full pagewidth 90 120 60 150 3 GHz 30 180 0.5 0.4 0.3 0.2 0.1 40 MHz + 0 - 150 30 120 90 VCE = 8 V; IC = 15 mA. 60 MBB311 Fig.19 Common emitter output reflection coefficient (S22). Rev. 05 - 23 November 2007 10 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors PACKAGE OUTLINES Plastic surface mounted package; 4 leads BFG67; BFG67/X; BFG67/XR SOT143B D B E A X y vMA HE e bp wM B 4 3 Q A A1 c 1 b1 e1 2 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143B REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 Rev. 05 - 23 November 2007 11 of 14 NXP Semiconductors Product specification NPN 8 GHz wideband transistors BFG67; BFG67/X; BFG67/XR Plastic surface mounted package; reverse pinning; 4 leads SOT143R D B E A X y vMA HE e bp wM B 3 4 Q A A1 c 2 b1 e1 1 Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max 0.1 bp 0.48 0.38 b1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 1.7 HE 2.5 2.1 Lp 0.55 0.25 Q 0.45 0.25 v 0.2 w 0.1 y 0.1 OUTLINE VERSION SOT143R REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-03-10 Rev. 05 - 23 November 2007 12 of 14 NXP Semiconductors BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Legal information Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 05 - 23 November 2007 13 of 14 NXP Semiconductors BFG67; BFG67/X; BFG67/XR NPN 8 GHz wideband transistors Revision history Table 1. Revision history Release date 20071123 Data sheet status Product data sheet Product specification Product specification Product specification Change notice Supersedes BFG67_X_XR_4 BFG67_SERIES_3 BFG67_SERIES_2 BFG67_SERIES_1 Document ID BFG67_X_XR_N_5 Modifications: BFG67_X_XR_4 (9397 750 04349) BFG67_SERIES_3 BFG67_SERIES_2 BFG67_SERIES_1 * Page 2; Table Marking code; row 1 and 2 code changed 19981002 19950901 - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 23 November 2007 Document identifier: BFG67_X_XR_N_5 |
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